Scalable Embedded DRAM Array

ABSTRACT

A method and apparatus for scaling an embedded DRAM array from a first process to a second process, wherein the scaling involves reducing the linear dimensions of features by a constant scale factor. From the first process to the second process, DRAM cell capacitor layout area is reduced by the square of the scale factor, while cell capacitance is reduced by the scale factor. The voltage used to supply the logic transistors is scaled down from the first process to the second process. However, the voltage used to supply the sense amplifiers remains constant in both processes. Thus, in an embedded DRAM array of the second process, sense amplifiers are supplied by a greater voltage than the logic transistors. This allows the sensing voltage of DRAM cells to be maintained from one process generation to another, while allowing memory size to scale with the square of the process scale factor.

RELATED APPLICATIONS

The present application is a divisional of U.S. patent application Ser.No. 11/534,506 by Wingyu Leung, entitled “Scalable Embedded DRAM Array”,which is a continuation-in-part of U.S. patent application Ser. No.11/166,856 by Wingyu Leung, entitled “Word Line Driver For DRAM Embeddedin A Logic Process”.

The present application is also related to U.S. Pat. No. 6,028,804, byWingyu Leung, entitled “Method and Apparatus for 1-T SRAM CompatibleMemory”, U.S. Pat. No. 6,573,548 B2 by Wingyu Leung and Fu-Chieh Hsu,entitled “DRAM cell having a capacitor structure fabricated partially ina cavity and method for operating the same”, U.S. Pat. No. 6,147,914 byWingyu Leung and Fu-Chieh Hsu, entitled “On-chip word line voltagegeneration for DRAM embedded in Logic Process”, and U.S. Pat. No.6,075,720 by Wingyu Leung and Fu-Chieh Hsu, entitled “Memory cell forDRAM embedded in Logic”. As described in more detail below, these patentapplications are incorporated by reference in their entirety.

FIELD OF THE INVENTION

The present invention is applicable to Dynamic Random Accessible Memory(DRAM). More specifically, it relates to a method and apparatus forincreasing the sensing speed of sense-amplifiers in an embedded DRAMsystem. The present invention further relates to the scaling of DRAMcells using trench or stack capacitors in embedded memory applications.

RELATED ART

FIG. 1 is a schematic diagram of a conventional DRAM cell 100 whichconsists of a PMOS pass-gate select transistor 101 coupled to a storagecapacitor 102. DRAM cell 100 is written, read and refreshed in a mannerknown to those of ordinary skill in the art, by applying access voltagesto bit line 103, word line 104, the counter-electrode of storagecapacitor 102, and the n-well region 105 in which PMOS transistor 101 isfabricated.

As the process technology continues to advance and device geometrycontinues to scale down, the lateral or planar dimensions of DRAM cell100 are required to scale down in order to keep up with the technologyscaling. Scaling down DRAM cell 100 advantageously reduces the requiredarea-per-bit and thus the cost-per-bit of the memory. The generalpractice in DRAM scaling has been to reduce the area of DRAM cell 100,without substantially decreasing the capacitance of storage transistor102 from one process generation to another.

Note DRAM cell 100 is typically fabricated using a process optimized fora DRAM system, and typically includes capacitor structures fabricatedwith multiple polysilicon and insulator layers, or in deep trenches,such that a standard DRAM cell has a capacitance greater than 20 fF (andtypically about 30 fF).

For example, in the DRAM described in “A 1-Mbit CMOS Dynamic RAM with aDivided Bitline Matrix Architecture” by R. T. Taylor et al, IEEE JSSC,vol. SC-20, No. 5, pp. 894-902 (1985), a DRAM cell having a cell storagecapacitance of 32 fF is fabricated using a process with criticaldimensions of 0.9 um; in “Dual-Operating-Voltage Scheme for a Single 5-V16-Mbit DRAM”, by M. Horiguchi et al, IEEE JSSC, vol. 23, No. 5, pp.1128-1132 (1988), a DRAM cell having a cell storage capacitance of 33 fFis fabricated using a 0.6 um process; and in “A Mechanically EnhancedStorage Node for Virtually Unlimited Height (MESH) Capacitor Aiming atsub 70 nm DRAMs”, by D. H. Kim et al, IEDM Tech. Dig., pp. 69-72 (2004),a DRAM cell having a cell storage capacitance of 30 fF is fabricatedusing a 70 nm process. Thus, a DRAM cell storage capacitance ofapproximately 30 fF has been maintained through many generations ofprocess scaling.

The reasoning for maintaining a constant DRAM cell storage capacitanceis described below. In general, a constant storage capacitance has beendeemed necessary to maintain a relatively constant bit-line sensingvoltage (V_(S)) across advancing processes.

The bit lines associated with DRAM cell 100 (i.e., bit line 104 and areference bit line that is not shown) are typically pre-charged tovoltage equal to V_(CC)/2 prior to a sensing operation (wherein V_(CC)is the supply voltage). Under these conditions, the bit line sensingvoltage (V_(S)) can be approximated by the following equation, whereinC_(C) is the storage capacitance of DRAM cell 100 and C_(P) is theparasitic bit line capacitance.

V _(S) =V _(CC)(C _(C))/[2(C _(C) +C _(P))]  (1)

In general, the cell capacitance C_(C) is significantly smaller than thebit line capacitance C_(P). For example, the cell capacitance C_(C) istypically at least three times smaller than the bit line capacitanceC_(P). Equation (1) can therefore be approximated by the followingequation.

V _(S) =V _(CC)(C _(C))/2C _(P)  (2)

The bit line capacitance C_(P) has two components, including a metalcapacitance C_(M) and a junction capacitance C_(J).

The metal capacitance C_(M), in turn, has two components, including anarea capacitance C_(A) and a side-wall capacitance C_(SW). The areacapacitance C_(A) represents the capacitances that exist between the bitline and the underlying and overlying layers. The side-wall capacitanceC_(SW) represents the capacitance that exists between the bit line andthe neighboring bit lines. Downward scaling from one process generationto another usually scales the linear dimensions of the feature sizes bya scale factor, for example ‘S’. This downward process scaling causesthe area capacitance C_(A) to be reduced as the square of the processscaling-factor S. However, downward scaling also decreases the distancebetween neighboring bit lines, thereby causing the side-wall capacitanceC_(SW) to increase by the same scale factor S. The combined scalingeffects of the area capacitance C_(A) and the side-wall capacitanceC_(SW) results in the metal capacitance C_(M) being reduced byapproximately the scale factor S.

The junction capacitance C_(J) is dependent on the drain junction areaof the select transistor 101 (which is coupled to bit line 104), and thedopant concentration of this drain junction. Downward scaling causes thedrain junction area to be reduced by a the square of the scale factor S.However, the drain junction dopant concentration increases in successivegenerations of process technology. These combined scaling effects resultin the junction capacitance C_(J) being reduced by approximately thescale factor S.

Because the metal capacitance C_(M) and the junction capacitance C_(J)both scale downward by a constant scale factor, the bit line capacitanceC_(P) also scales downward by the same scale factor. As transistorsscale down from one process generation to another, the V_(CC) supplyvoltage from which the transistors can reliably operate decreases. Forexample, the nominal V_(CC) supply voltages for typical 0.25 um, 0.18um, and 0.13 um processes are 2.5 Volts, 1.8 Volts, and 1.3 Volts,respectively. Thus, the V_(CC) supply voltage scales downward by thesame process scale from one process generation to another.

The downward scaling factor of the V_(CC) supply voltage offsets thedownward scaling factor of the bit line capacitance C_(P). Thus,equation (2) can be approximated as follows for process scaling purposes(wherein ‘k’ is a constant).

V _(S) =k(C _(C))  (3)

Thus, the sensing voltage V_(S) can be maintained at a relativelyconstant level with process advancement, as long as the storagecapacitance C_(C) remains constant with process advancement. However, itis difficult to maintain a constant storage capacitance C_(C) acrossadvancing processes.

FIG. 2 is a cross sectional view of simple planar DRAM cell 200, whichincludes PMOS pass-gate select transistor 201 and storage capacitor 202.DRAM cell 200 is considered a planar cell because both select transistor201 and storage capacitor 202 are located substantially at the surfaceof silicon substrate 220 (i.e., the surface of n-well region 221).Select transistor 201 includes drain 211, source 212, gate oxide 213 andgate electrode 214. Storage capacitor 202 is formed by a planar PMOSstructure that includes source 212, capacitor dielectric layer 215 andcounter-electrode 216. The charge stored by the planar storage capacitor202 determines the logic state of the bit stored by DRAM cell 200. Fieldoxide 230 isolates DRAM cell 200 from other DRAM cells fabricated inN-well 221. DRAM cell 200 is described in more detail in U.S. Pat. No.6,075,720 by Wingyu Leung and Fu-Chieh Hsu, entitled “Memory Cell ForDRAM Embedded In Logic”.

The downward scaling of planar storage capacitor 202 causes the cellcapacitance C_(C) to be reduced by a factor equal to the square of theprocess scaling factor S. This is because both the length and width ofthe planar storage capacitor 202 are reduced by the scale factor S. Forthis reason, it has been difficult to maintain a constant cellcapacitance C_(C) across advancing processes using planar storagecapacitors.

Thus, maintaining a constant cell capacitance C_(C) while scaling downthe lateral or planar dimensions of a DRAM cell has been achieved withthe introduction of complex capacitor structures and non-standarddielectric materials. For example, the cell capacitance of DRAM cellshas been improved using stacked capacitor structures and trenchcapacitor structures.

FIG. 3 is a cross sectional view of a stacked DRAM cell 300, whichincludes select transistor 301 and stacked cell capacitor 302. Stackedcell capacitor 302 includes conductive elements 321-323. Conductiveelements 321 and 322 form the electrode and counter-electrode,respectively, of cell capacitor 302, while conductive element 323connects capacitor electrode 321 to the source of select transistor 301.Stacked cell capacitor 302 has a metal-insulator-metal (MIM) structure,wherein a dielectric material is located between electrode 321 andcounter-electrode 322. Stacked cell capacitor 302 is formed at leastpartially over select transistor 301 to minimize layout area of DRAMcell 300. The capacitance of stacked capacitor 302 largely depends onthe vertical height of electrode 321 and counter-electrode 322. Thus,the capacitance of stacked capacitor 302 can be increased by increasingthe vertical dimensions of electrode 321 and counter-electrode 322.However, increasing these vertical dimensions such that a constantcapacitance is maintained across advancing processes further complicatesthe process required to fabricate DRAM cell 300. DRAM cell 300 isdescribed in more detail in U.S. Patent Application Publication No.US2005/0082586 A1 by Kuo-Chi Tu et al, entitled “MIM Capacitor Structureand Method of Manufacture”.

FIG. 4 is a cross sectional view of a folded (trench) capacitor DRAMcell 400, which includes PMOS select transistor 401 and folded capacitorstructure 402. Note that folded capacitor structure includes a portionthat is ‘folded’ along the side-wall of a trench formed in field oxideregion (FOX). The capacitance of trench capacitor 402 largely depends onthe depth of this trench. Thus, the capacitance of trench capacitor 402can be increased by increasing the depth of the trench. However,increasing this depth such that a constant capacitance is maintainedacross advancing processes further complicates the process required tofabricate DRAM cell 400. DRAM cell 400 is described in more detail inU.S. Pat. No. 6,642,098 B2 by Wingyu Leung and Fu-Chieh Hsu, entitled“DRAM Cell Having A Capacitor Structure Fabricated Partially In A CavityAnd Method For Operating The Same”.

Stack capacitor 302 and trench capacitor 402 each has two maincapacitive components: a vertical or side-wall component and ahorizontal or lateral component. In deep submicron processes such asprocesses with 0.13 um or smaller features, the vertical component issubstantially larger than the horizontal component. The verticalcomponent of the cell capacitance is determined by the side-wall area,which includes both a vertical dimension and a planar dimension. Processscaling tends to decrease the planar feature sizes so as to decrease theoverall size of the semiconductor device. (Note that it not generallynecessary to reduce the vertical feature size to reduce the overall sizeof the semiconductor device.) As a result, the side-wall area (andtherefore the vertical component of the cell capacitance) is scaled downdirectly with process scale factor. Because the vertical component ofthe cell capacitance dominates the cell capacitance, the cellcapacitance is also scaled approximately by the process scale factor.

Process scaling therefore causes both the cell capacitance and the bitline capacitance to scale down with the process scale factor for DRAMcells using stack capacitor 302 or trench capacitor 402. Consequently,it is easier to scale stack capacitor 302 and trench capacitor 402 thanplanar capacitor 202. However, stacked capacitor structure 302 andfolded capacitor structure 402 will still exhibit a relatively lowcapacitance of about 1.5 to 10 femto-Farads (fF) if fabricated inaccordance with a conventional CMOS process. Thus, scaling stackedcapacitor structure 302 and folded capacitor structure 402 requiresprocess modifications that provide for higher sidewalls and deepertrenches, respectively. In general, the higher the stack or the deeperthe trench, the more complicated the processing steps required to formthe cell capacitor.

Non-standard dielectric materials (i.e., dielectric materials other thansilicon oxide) used in DRAM capacitors include silicon oxy-nitride,tantalum pentoxide and zirconium oxide. An example of a tantalumpentoxide cell is described in “A 2.5V 333 Mb/s/pin 1 Gb Double DataRate SDRAM”, by H. Yoon et al, Digest of ISSCC, 1999, pp. 412-412. Thenon-standard dielectric materials exhibit higher dielectric constants,which tend to increase the capacitance of the DRAM cell capacitor,thereby compensating for the reduction in capacitance due to lateraldown scaling. However, the use of non-standard dielectric materials addscost and complexity to the associated process. Note that planarcapacitor 202, stacked capacitor 302 and trench capacitor 402 eachincludes only one dielectric layer located between the electrode andcounter-electrode.

It would therefore be desirable to have a DRAM cell that is readilyscalable, and can be fabricated using a CMOS process, without exhibitingthe shortcomings described above.

SUMMARY

The present invention provides an improved method for scaling anembedded DRAM array from a first process to a second (advanced) process.The layout area of the DRAM cell capacitors is reduced from the firstprocess to the second process. In a particular embodiment, the DRAM cellcapacitance is scaled down directly with the process scale factor. SuchDRAM cell capacitance scaling can be achieved by using a foldedcapacitor structure, a stacked (MIM) capacitor structure, or a trenchcapacitor structure.

A first V_(CC) supply voltage is used to operate the embedded circuitsfabricated in accordance with the first process, and a second (reduced)V_(CC) supply voltage is used to operate the embedded circuitsfabricated in accordance with the second process. The first V_(CC)supply voltage is used to operate both logic transistors and senseamplifier transistors fabricated using the first process. However, thesecond V_(CC) supply voltage is only used to operate the logictransistors fabricated using the second process. A voltage greater thanthe second V_(CC) supply voltage is used to operate the sense amplifiertransistors fabricated using the second process. In a particularembodiment, a voltage corresponding with the first V_(CC) supply voltageis used to operate the sense amplifier transistors fabricated using thesecond process. Stated another way, the voltage used to operate thesense amplifier transistors remains constant from the first process tothe second process. As a result, a constant sensing voltage V_(S) ismaintained from the first process to the second process.

The present invention will be more fully understood in view of thefollowing description and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of a conventional DRAM cell which includesa PMOS select transistor coupled to a storage capacitor.

FIG. 2 is a cross sectional view of conventional planar DRAM cell, whichincludes a PMOS select transistor coupled to a planar storage capacitor.

FIG. 3 is a cross sectional view of a conventional DRAM cell, whichincludes a select transistor coupled to a stacked cell capacitor.

FIG. 4 is a cross sectional view of a conventional DRAM cell, whichincludes a PMOS select transistor coupled to a folded (trench) capacitorstructure.

FIG. 5 is a block diagram of an integrated circuit chip fabricated usinga 0.13 micron (130 nanometer) process, and a corresponding integratedcircuit chip fabricated using a 65 nanometer (nm) process, in accordancewith one embodiment of the present invention.

FIG. 6 is a block diagram illustrating various device parametersimplemented by the integrated circuit chips of FIG. 5 in accordance withone embodiment of the present embodiment.

FIG. 7 is a circuit diagram of a sense amplifier for use in theintegrated circuit chip of FIGS. 5 and 6 fabricated with the 65nanometer (nm) process.

FIG. 8 is a circuit diagram of a voltage translation circuit for use inthe sense amplifier circuit of FIG. 7.

FIG. 9 is a block diagram of a boosted voltage generator used togenerate a boosted sense amplifier enable signal for use in the presentinvention.

FIG. 10 is a circuit diagram of a voltage comparator including a stepdown circuit, which can be used in the boosted voltage generator of FIG.9.

DETAILED DESCRIPTION

In accordance with the present invention, the sensing voltage V_(S) ofembedded DRAM arrays in advancing processes is maintained at a constantlevel by applying the same supply voltage to the DRAM sense amplifiersacross these advancing processes. This is in contrast with theabove-described prior art, in which the sensing voltage V_(S) ofembedded DRAM arrays in advancing processes is maintained at a constantlevel by maintaining a constant cell capacitance C_(C) across theseadvancing processes.

In the present specification, the constant supply voltage applied to thesense amplifiers across advancing processes is designated V_(CCS).Although the sense amplifier supply voltage V_(CCS) remains constant,the V_(CC) supply voltage continues to be reduced across advancingprocesses. The V_(CC) supply voltage is still used to supply the rest ofthe on-chip circuitry (e.g., embedded logic circuits).

Substituting the constant sense amplifier supply voltage V_(CCS) intoequation (2) provides the following equation for the sensing voltageV_(S).

V _(S) =V _(CCS)(C _(C))/2C _(P)  (4)

Because V_(CCS) is constant, equation (4) can be simplified as follows(where K is a constant).

V _(S) =K(C _(C))/C _(P)  (5)

As described above, the bit line capacitance C_(P) decreases linearlywith advancing processes. Thus, the cell capacitance C_(C) is alsoallowed to decrease linearly with advancing processes without changingthe sensing voltage V_(S).

Stated another way, because the sensing voltage V_(S) is maintained at aconstant level across advancing processes by controlling the senseamplifier supply voltage V_(CCS), the cell capacitance C_(C) does notneed to be maintained at a constant value (e.g., 30 fF) across advancingprocesses. That is, the cell capacitance C_(C) may decrease acrossadvancing processes, thereby allowing the memory cell size to be scaled.More specifically, the memory cell size may be scaled down withoutincurring the higher processing cost of increasing substantially thetrench depth or stack height of the cell capacitor.

In accordance with one embodiment of the present invention, a DRAM arrayis embedded in a logic process such that the additional process stepsrequired to construct the DRAM cells has no significant effect on theperformance of the logic transistors. In one embodiment, the embeddedDRAM array is fabricated in an ASIC or logic process that has criticaldimensions of 0.13 microns or less. The logic transistors in thisprocess therefore have a gate oxide thickness of approximately 20Angstroms or less. If these logic transistors were used to constructDRAM cells as shown in FIG. 4, the gate oxide leakage would beundesirably high, thereby causing the DRAM cells to have a very shortdata retention time. Thus, in accordance with the described embodimentsof the present invention, the gate oxide thickness of MOS devices usedto form the embedded DRAM cells is modified to be approximately 26Angstroms. A gate oxide thickness of 26 Angstroms advantageouslyminimizes the gate leakage of the DRAM cells, without undulycomplicating the associated process. As described in more detail below,the gate oxide thickness of the DRAM cells is kept constant, and is notscaled with the process. As a result, the voltage stored in thecapacitor of the DRAM cell (i.e., the sensing voltage V_(S)) can be keptsubstantially constant across advancing processes, without affecting thereliability of the DRAM cells.

In accordance with one embodiment of the present invention, the cellcapacitor structure is selected such that the capacitance of thisstructure decreases linearly with advancing processes. Examples of suchcell capacitor structures include folded (trench) capacitors, stackedcapacitors, and normal trench capacitors such as those described in“Cosmic Ray Soft Error Rates of 16-Mb DRAM Memory Chips”, by J. F.Ziegler et al, IEEE JSSC vol. 33, No. 2, February 1998, pp. 246-251.

An embedded DRAM cell structure that may be used in accordance with oneembodiment of the present invention is described in more detail incommonly owned U.S. Pat. No. 6,573,548 B2 by Wingyu Leung and Fu-ChiehHsu, entitled “DRAM cell having a capacitor structure fabricatedpartially in a cavity and method for operating the same”, which ishereby incorporated by reference in its entirety. This DRAM cellimplements a folded (trench) capacitor cell structure as illustrated inFIG. 4.

Another embedded DRAM cell that may be used in accordance with thepresent invention is described in more detail in U.S. Patent ApplicationPublication No. US2005/0082586 A1 by Kuo-Chi Tu et al., entitled “MIMCapacitor Structure and Method of Manufacture”. This DRAM cellimplements a stacked metal-insulator-metal (MIM) capacitor cellstructure as illustrated in FIG. 3.

These embedded DRAM cells will have a relatively small cell capacitanceof about 1.0 to 5.0 fF (even when using an oxide thickness of 26Angstroms). To compensate for this small cell capacitance, relativelyshort bit lines, having a relatively small bit line capacitance C_(P),are used in the DRAM array. In one embodiment, the bit lines are keptshort by limiting the number of word lines (i.e., the number of DRAMcells per column) in the DRAM array to 64 or less. To limit the amountof loading on the circuitry generating the sense amplifier supplyvoltage V_(CCS), the DRAM array may also use relatively short wordlines, wherein the DRAM array has less than 700 columns. Within the DRAMarray, a sense amplifier is required for every column. By limiting thenumber of columns in an array to a relatively small number, the numberof sense amplifiers that are turned on during each access is limited,and therefore the power requirements of the sense amplifier voltagesupply is limited for a memory operation. The short bit line and wordline array organization also provides the benefits of fast memory cycletime and low operating power.

FIG. 5 is a block diagram of an integrated circuit chip 500 fabricatedusing a 0.13 micron (130 nanometer) process, and a correspondingintegrated circuit chip 600 fabricated using a 65 nanometer (nm)process, in accordance with one embodiment of the present invention.Integrated circuit chip 500 includes embedded DRAM array 501 and logic502, while integrated circuit chip 600 includes embedded DRAM array 601,logic circuit 602 and voltage boosting circuit 603. Embedded DRAM array501 includes N DRAM banks 510 ₁-510 _(N), each having a correspondingsense amplifier circuit 520 ₁-520 _(N), and a memory controller 530.Similarly, embedded DRAM array 601 includes N DRAM banks 610 ₁-610 _(N),each having a corresponding sense amplifier circuit 620 ₁-620 _(N), anda memory controller 630. In the described embodiments, each of DRAMbanks 510 ₁-510 _(N) and 610 ₁-610 _(N) includes a 32 row by 512 columnarray of DRAM memory cells.

In one embodiment, DRAM arrays 501 and 601 can be implemented using a 32k×32 memory macro similar to the one described in commonly owned U.S.Pat. No. 6,504,780B2, “Method and Apparatus For Completely HidingRefresh Operations In a DRAM Device Using Clock Division”, by WingyuLeung. This memory macro consists of 64 DRAM banks (i.e., N=64), whereineach of these DRAM banks is organized into 32 rows and 512 columns. Twoseparate versions of the memory macro using the same memory architectureand memory cell structure are used to design DRAM array 501 and DRAMarray 601.

Within the 130 nm integrated circuit chip 500, an external V_(CC) powersupply, which provides a nominal V_(CC1) supply voltage of 1.2 Volts, isused to operate sense amplifier circuits 520 ₁-520 _(N) and logiccircuit 502. However, in the 65 nm integrated circuit chip 600, anexternal V_(CC) power supply, which provides a reduced nominal V_(CC2)supply voltage of 1.0 Volts, is used to operate logic circuit 602.Voltage boosting circuit 603 generates a boosted voltage V_(CCS), whichis used to operate sense amplifier circuits 620 ₁-620 _(N). In thedescribed embodiment, the boosted voltage V_(CCS) is selected to beequal to the V_(CC1) supply voltage of integrated circuit chip 500(i.e., 1.2 Volts).

FIG. 6 is a block diagram illustrating various device parametersimplemented by integrated circuit chips 500 and 600 in accordance withthe present embodiment. More specifically, FIG. 6 illustrates: (1) DRAMcells 550 and 650, which are representative of the DRAM cells includedin memory banks 510 ₁ and 610 ₁, respectively; (2) sense amplifiertransistors 521 and 621, which are representative of the transistorsimplemented by sense amplifier circuits 520 ₁ and 620 ₁, respectively;and (3) logic transistors 512 and 612, which are representative of thetransistors implemented in logic circuits 502 and 602, respectively.DRAM cell 550 includes access transistor 551 and cell capacitor 552,while DRAM cell 650 includes access transistor 651 and cell capacitor652.

On 130 nm integrated circuit chip 500, logic transistor 512 and senseamplifier transistor 521 each has a gate oxide thickness G_(OX1) ofapproximately 20 Angstroms. This thickness is selected to optimize theperformance of logic transistor 512 and sense amplifier transistor 521in response to the V_(CC1) supply voltage of 1.2 Volts.

Within DRAM cell 550, access transistor 551 has a gate oxide thicknessG_(OX3) of about 26 Angstroms. Similarly, the thickness of the capacitoroxide C_(OX) of cell capacitor 552 has a thickness of about 26Angstroms. As described above, these increased oxide thicknessesadvantageously increase the data retention time of DRAM cell 550. In thedescribed example, cell capacitor 552 has a capacitance C_(C1) of about3.2 fF. DRAM cell 550 has a layout area of about 0.52 micron², and anassociated bit line capacitance C_(P1) of about 11 fF.

On 65 nm integrated circuit chip 600, logic transistor 612 and senseamplifier transistor 621 each has a gate oxide thickness G_(OX2) ofabout 16 Angstroms. This thickness is selected to optimize theperformance of logic transistor 612 in response to the V_(CC2) supplyvoltage of 1.0 Volt. The channel length of logic transistor 612corresponds with the minimum line width of the 65 nm process, therebyallowing this transistor to exhibit a fast switching time.

Sense amplifier transistor 621 operates in response to the boostedV_(CCS) voltage of 1.2 Volts. To allow sense amplifier transistor 621 tooperate at this higher voltage without reliability degradation, thechannel length of this transistor 621 is made longer than the minimumline width of the 65 nm process. For example, sense amplifier transistor621 may have a channel length of about 90 nm.

As mentioned above, the sense amplifier supply voltage V_(CCS) of 1.2Volts is generated by voltage boosting circuit 603 in response to theV_(CC2) supply voltage of 1.0 Volt. The internally generated V_(CCS)voltage has a much smaller variation (+/−50 mv) than the externalV_(CC2) supply voltage (+/−100 mV). This smaller variation existsbecause the V_(CCS) voltage is used exclusively to supply the senseamplifier circuits, and because there are only 512 sense amplifiercircuits in a memory block (as compared to 1024 or more in a standardDRAM array). Thus, the amount of switching current and consequently thevoltage noise is minimized. The tighter voltage regulation together withthe use of slightly longer channel length in the sense amplifiertransistors (e.g., sense amplifier transistor 621) allows the use of ahigher supply voltage in the sense-amplifier transistors withoutcompromising the reliability of the sense-amplifier circuit.

Within DRAM cell 650, access transistor 651 has a gate oxide thicknessG_(OX3) of about 26 Angstroms. Similarly, the thickness of the capacitoroxide C_(OX) of cell capacitor 652 has a thickness of about 26Angstroms. In the described example, cell capacitor 652 has acapacitance C_(C2) of about 1.6 fF. DRAM cell 650 has a layout area ofabout 0.13 micron², and an associated bit line capacitance C_(P2) ofabout 5.5 fF.

Substituting the above-described values of V_(CC1), C_(C1) and C_(P1) inequation (1) yields a sensing voltage V_(S) for memory bank 510 ₁ ofabout 0.135 Volts. Substituting the above-described values of V_(CCS),C_(C2) and C_(P2) in equation (1) yields a sensing voltage V_(S) formemory bank 610 ₁ of about 0.135 Volts. Thus, the sensing voltage V_(S)is not reduced when scaling from the 130 nm process to the 65 nmprocess. However, the bit line capacitance C_(P) and cell capacitanceC_(C) are scaled down by half, and the DRAM cell size is scaled down insquare fashion by a factor of four. This result of memory array scalingis achieved without changing the trench depth (3500 Angstroms) of thecell capacitor.

FIG. 7 is a circuit diagram of a sense amplifier 700 used in accordancewith one embodiment of the present invention. For example, senseamplifier 700 may be present in sense amplifier circuit 620 ₁ of FIG. 6.Sense amplifier 700 is similar to the sense amplifier shown in FIG. 1 ofcommonly owned U.S. Pat. No. 6,324,110 B1, “High-speed Read-writeCircuitry For Semi-conductor Memory,” by Wingyu Leung and Jui-Pin Tang,except that sense amplifier uses a sense amplifier power supply voltageV_(CCS), which is different than the V_(CC2) supply voltage used bylogic circuitry within or outside the memory macro.

The bi-stable sense-amplifier 700 consists of a cross-coupled pair ofPMOS transistors P1-P2 and a cross-coupled pair of NMOS transistorsN1-N2. The sources of the PMOS cross-coupled pair are connected to thevirtual supply line VSL. The virtual supply line VSL is common to theother sense amplifiers of the same memory block (e.g., sense amplifier701 and the other sense amplifiers in sense amplifier circuit 620 ₁).The sources of the NMOS cross-coupled pair are connected to the virtualground line VGL. The virtual ground line VGL is common to other senseamplifiers of the same memory block. The cross-coupled transistor pairsP1-P2 and N1-N2 form a regenerative sense-amplifier, which amplifies thedifferential signal present on the complementary bit line pair BL andBL#. The amplified signal on the bit line pair BL and BL# is coupled tothe data line pair DL and DL# through NMOS transistors N4 and N5 duringa read or write access to the memory block.

NMOS transistors N6 and N7 couple bit lines BL and BL#, respectively, toa internally generated voltage which is approximately equal to half ofthe sense amplifier supply voltage V_(CCS). The gates of transistors N6and N7 are coupled to receive the equalization (or pre-charge) controlsignal EQ. When the memory block is not accessed, the equalizationsignal EQ is activated high, thereby pre-charging the bit lines BL andBL# to V_(CCS)/2. The virtual supply line VSL is coupled to the senseamplifier supply voltage V_(CCS) by PMOS transistor P3. The gate oftransistor P3 is coupled to receive sense amplifier enable signal SE#,which is an active low signal. Similarly, the virtual ground line VGL iscoupled to the ground voltage supply by NMOS transistor N3. The gate oftransistor N3 is coupled to receive sense amplifier enable signal SE,which is an active high signal (and the complement of SE#).

During a memory access, the sense amplifier enable signals SE/SE# areactivated, and the regenerative latch formed by transistors P1-P2 andN1-N2 amplifies the small sense signal on bit line pair BL/BL#. Theregenerative latch also performs data restoration, so that the storagecapacitor of the selected DRAM cell is charged substantially close toground or the V_(CCS) supply voltage at the end of a sensing operation.The charge stored in the cell capacitor is directly proportional to therestore voltage. For a logic ‘1’ data value the restored voltage isclose to the V_(CCS) sense amplifier supply voltage, and for a logic ‘0’data value the restored voltage is close to ground. Because the bitlines BL/BL# are pre-charged to V_(CCS)/2, the stored chargesrepresenting a logic ‘1’ value and a logic ‘0’ value are equal, butopposite in polarity. In both cases, the amount of stored charge (Q) isdefined by equation (6) below.

Q=V _(CCS) *C _(C)/2  (6)

By using the internally generated sense-amplifier supply voltageV_(CCS), which has a higher voltage than the external power supplyV_(CC2), the charge stored in the DRAM cell capacitor is increased, andthus the sensing voltage (V_(S)) generated on the bit line pair BL/BL#is also increased.

The sensing time required for sense amplifier 700 to amplify the sensingvoltage (V_(S)) on bit line pair BL/BL# to the full V_(CCS) voltage isdominated by the initial sensing current in the regenerative latchformed by transistors P1-P2 and N1-N2 when the sense amplifier enablesignals SE and SE# are activated. This initial sensing current isproportional to the square of the difference between the bit-linepre-charge voltage V_(CCS)/2 and the absolute threshold voltage (V_(T))of the transistors, or (V_(CCS)/2−V_(T))².

In sense amplifier 700 (which was fabricated using the 65 nm process),the minimum value of V_(CCS)/2 is 0.575 Volts (i.e., (1.2 Volts−50millivolt variation)/2). The absolute threshold voltage is about 0.4Volts, such that the initial sensing current is equal to 0.03 k, where kis a proportional constant.

In contrast, if sense amplifier 700 were supplied by the V_(CC2) supplyvoltage of 1.0 Volt, the minimum pre-charge voltage would be equal to0.45 Volts (i.e., (1.0 Volt−0.1 Volt variation)/2). Again, the absolutethreshold voltage is about 0.4 Volts, such that the initial sensingcurrent would be equal to 0.0025 k. Boosting the sense amplifier supplyvoltage V_(SSC) to 1.2 Volts in the present embodiment thereforeincreases the initial sensing current of sense amplifier 700 by a factorof 12, thereby increasing the sensing speed of sense amplifier 700.

In another embodiment, the transistors of sense amplifier 700 aremodified to have an increased gate oxide thickness of 26 Angstroms(i.e., the same thickness as the oxide used in the DRAM cells). In thisembodiment, the channel lengths of the transistor gates are allincreased to 0.18 microns. The longer gate lengths and the increasedgate oxide thickness allow sense amplifier supply voltage V_(CCS) to beincreased to 2.0 Volts, without compromising the long-term reliabilityof the sense amplifier 700. Increasing the channel length of thetransistors to 0.18 microns increases the overall layout area of senseamplifier 700 by less than 10 percent because the layout area isdominated by interconnect structures associated with the transistors andthe channel widths of these transistors, which have dimensionssubstantially greater than 0.18 microns. A sense amplifier supplyvoltage V_(CCS) of 2.0 Volts allows 67 percent more charge to be storedin the DRAM cell capacitor than a sense amplifier supply voltage V_(CCS)of 1.2 Volts. As a result, the cell capacitance of the memory cell canbe reduced by 67 percent without affecting the sensing voltage V_(S).

The folded capacitor shown in FIG. 4 includes both a planar componentand a side-wall component. The side-wall component dimension is limitedby the minimum lateral design rules and the trench depth of the process.Therefore, side-wall capacitance cannot be reduced further. The planarcomponent, however, can be reduced to design rules minimum. This resultsin a cell size reduction of less than 10 percent, because the lateraldimension of the original cell capacitor is already quite close thedesign rule limit. The benefit of this scheme is more prominent if aplanar capacitor structure is used instead of trench or stack capacitorstructure. This is because, as illustrated in FIG. 2, when using aplanar capacitor structure, the cell size is pre-dominantly occupied bythe lateral storage capacitance.

Because logic circuit 602 has a voltage swing of V_(CC2) to ground, thelogic signals used to activate equalization circuit EQ, column selectsignal CS and sense amplifier enable signals SE and SE# must betranslated to a voltage swing of V_(CCS) to ground. FIG. 8 is a circuitdiagram of a voltage translation circuit 800 that can be used for thispurpose. Voltage translation circuit 800, which includes PMOStransistors 801-802, NMOS transistors 803-804 and inverter 805,generates the sense amplifier enable signals SE/SE# in response to aSENSE logic signal, which has a voltage swing of V_(CC2) to 0. Theequalization signal EQ and column select signal CS can be generated in asimilar manner. Because voltage translation is well known in the art ofmemory and logic design, this circuit is not elaborated further in thisdisclosure.

In accordance with one embodiment, voltage boosting circuit 603 (FIG. 6)is a charge pump regulator, which generates the sense-amplifier supplyvoltage V_(CCS) of 1.2 Volts in response to the 1 Volt external powersupply V_(CC2). Charge pump regulators are well known in the art. FIG. 9is a block diagram of a boosted voltage generator 603 used in oneembodiment of the present invention. Boosted voltage generator 603includes a ring oscillator 901, a charge pump 902 and a voltagecomparator 903, which compares the output voltage V_(CCS) of thegenerator with a reference voltage V_(REF). If the reference voltageV_(REF) is higher than V_(CCS), then the output (INHIBIT) of voltagecomparator 903 is driven low and ring oscillator 901 and charge pump 902are enabled. When enabled, charge pump 902 causes the sense amplifiersupply voltage V_(CCS) to increase. When the sense amplifier supplyvoltage V_(CCS) becomes slightly higher than the reference voltageV_(REF), the INHIBIT output of voltage comparator 903 is driven high,thereby disabling ring oscillator 901 and charge pump 902. Ringoscillator 901 and charge pump 902 are conventional elements that arewell documented in references such as U.S. Pat. Nos. 5,703,827 and5,267,201. The reference voltage V_(REF) can be generated external tothe memory using a band-gap reference circuit such as those described in“Analysis and Design of Analog Integrated Circuits”, by P. R. Gray andR. G. Meyer, John Wiley and Sons Inc. 3^(rd) edition, 1993, pp. 338-346.

FIG. 10 is a circuit diagram of voltage comparator 903, as used in oneembodiment of the present invention. Voltage comparator 903 includesPMOS transistors 1001-1003, NMOS transistors 1011-1019 and resistor R1.Transistors 1001-1003 and 1015-1018 form a conventional two-stagedifferential amplifier, which amplifies the differential signal appliedto the gates of transistors 1015 and 1016. The small differential signalis amplified and converted into a full swing digital output signal,INHIBIT. Because the voltages V_(REF) and V_(CCS) received by comparator903 are normally greater than V_(CC2), a voltage step down circuit isused to ensure that the two stage amplifier stays in a high gainoperating region. Transistors 1011-1014 form a source-follower thattranslates both the reference voltage V_(REF) and sense amplifier supplyvoltage V_(CCS) to values about one threshold voltage drop (V_(T) ˜0.4Volts) lower than their respective values. Resistor R1 and transistor1019 form a biasing circuit setting transistors 1013, 1014, 1017 and1018 in the saturation region. By using a band-gap voltage referencewith low temperature coefficient and a high gain comparator, the V_(CCS)voltage can be regulated with high precision. Because the loading on theV_(CCS) voltage supply is minimized by using a small bank size, with arelatively small number of sense amplifiers turning on at one time, theswitching noise amplitude is minimized.

Although the present invention has been described in connection withseveral embodiments, it is understood that this invention is not limitedto the embodiments disclosed, but is capable of various modifications,which would be apparent to one of ordinary skill in the art. Thus, theinvention is limited only by the following claims.

1. A method for scaling a DRAM array embedded on the same chip as alogic circuit comprising: applying a first supply voltage to logictransistors of a first logic circuit; applying a second supply voltageto sense amplifier transistors of a first DRAM system, wherein the firstlogic circuit and the sense amplifier transistors of the first DRAMarray are located on first chip fabricated using a first generationprocess; applying a third supply voltage, less than the first supplyvoltage, to logic transistors of a second logic circuit; and applying afourth supply voltage, greater than the third supply voltage, to senseamplifier transistors of a second DRAM system, wherein the second supplyvoltage and the fourth supply voltage are substantially the same.
 2. Themethod of claim 1, wherein the fourth supply voltage is equal to thefirst supply voltage.